2008. 9. 23 1/3 semiconductor technical data kta701e epitaxial planar pnp transistor revision no : 2 general purpose application. switching application. features a super-minimold package houses 2 transistor. excellent temperature response between these 2 transistor. high pairing property in h fe . the follwing characteristics are common for q 1 , q 2 . maximum rating (ta=25 ) dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. q emitter 2. q base 3. q collector 4. q emitter 5. q base 6. q collector 1 1 1 2 2 2 electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c * 200 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 dc current gain h fe (note) v ce =-6v, i c =-2 120 - 400 collector-emitter saturation voltage v ce(sat) i c =-100 , i b =-10 - -0.1 -0.30 v transition frequency f t v ce =-10v, i c =-1 80 - - collector output capacitance c ob v cb =-10v, i e =0, f=1 - 4 7 noise figure nf v ce =-6v, i c =-0.1 , f=1 , rg=10 - 1.0 10 1 q1 q2 23 65 4 * total rating note : h fe classification y(4):120 240, gr(6):200 400 s4 123 4 5 6 lot no. type name equivalent circuit (top view) marking
2008. 9. 23 2/3 kta701e revision no : 2 c collector current i (ma) 0 -40 30 dc current gain h fe 3k -3 -1 -0.3 -0.1 collector current i (ma) c c 0 collector-emitter voltage v (v) ce ce c i - v h - i v - i c collector current i (ma) -0.1 -0.1 base-emitter saturation base current i ( a) b -0.3 0 base-emitter voltage v (v) be i - v f - i c collector current i (ma) -0.1 3k t transition frequency f (mhz) 10 collector-emitter saturation -0.01 -0.1 collector current i (ma) c v - i -1 -2 -3 -4 -5 -6 -7 -80 -120 -160 -200 -240 i =-0.2ma b b i =-0.5ma b i =-1.0ma b i =-1.5ma b i =-2.0ma b i =0ma common emitter ta=25 c fe c -10 -30 -100 -300 50 100 300 500 1k ta=100 c ta=100 c ta=25 c ta=-25 c ta=-25 c v =-6v v =-6v ce ce v =-1v v =-1v common emitter ce(sat) c voltage v (v) ce(sat) -0.3 -1 -3 -10 -30 -100 -300 -0.03 -0.05 -0.1 -0.3 -0.5 -1 ta=100 c ta=25 c ta=-25 c common emitter i /i =10 c b c be(sat) voltage v (v) be(sat) -0.3 -1 -10 -30 -100 -300 -3 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 ta=25 c c b t c -0.3 -1 -3 -10 -30 -100 -300 30 50 100 300 500 1k common emitter v =-10v ta=25 c ce bbe -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -3 -10 -30 -100 -300 -1k common emitter v =-6v ce ta=100 c ta=25 c ta=-25 c
2008. 9. 23 3/3 kta701e revision no : 2 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 50 100 150 200 250 150
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